Rahim Faez
Associate Professor
faez@sharif.edu
rfaez@yahoo.com
+98-21-66164350
103 West-Ground Floor
Department of Electrical Engineering, Sharif University of Technology, Azadi Ave., Tehran, Iran.
Office Hours:
Sunday & Tuesday Morning 8-12
Journal Papers:
102. Samaneh Hashemi, Rahim Faez, Ghafar Darvish, "Computational Study of Spin caloritronics in a pristine and defective Antimonene nanoribbon", Physica E: Low-dimensional Systems and Nanostructures (2020), https://doi.org/10.1016/j.physe.2020.114083.
101. Behrouz Behtoee, Rahim Faez, Ali Shahhoseini, and Mohammad Kazem Moravvej-Farshi, "Using Superlattice Structure in the Source of GNRFET to Improve Its Switching Performance", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 67, NO. 3, MARCH 2020.
100. Hassan Shamloo, Atefeh Nazari, Rahim Faez, Ali Shahhoseini, "Local impact of Stone-Wales defect on a single layer GNRFET", Physics Letters A, Volume 384, Issue 7, 126170, 9 March 2020.
doi.org/10.1016/j.physleta.2019.126170.
99. Morteza Rahmani, Vahid Ahmadi, and Rahim Faez, "Engineered Nanopores-Based Armchair Graphene Nanoribbon FET With Resonant Tunneling Performance", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 66, NO. 12, DECEMBER 2019. DOI: 10.1109/TED.2019.2945880.
98. Farahnaz Zakerian, Morteza Fathipour, Rahim Faez, Ghafar Darvish, "Near‑room‑temperature spin caloritronics in a magnetized and defective zigzag MoS2 nanoribbon", Journal of Computational Electronics, Nov. 2019, doi.org/10.1007/s10825-019-01406-3.
97. Hassan Shamloo, Atefeh Nazari, Rahim Faez, and Saeed Haji-Nasiri, "A Functional Study of a Bilayer Graphene Nanoribbon FET With Four Different Gate Insulators", IEEE TRANSACTIONS ON NANOTECHNOLOGY, Volume 18, 2019.
96. Saeed Haji-Nasiri, Mmohammad Kazem Moravvej Farshi, Rahim Faez, "Circuit model and transfer matrix model of mixed multiwall carbon nanotube interconnects," Modeling in Engineering, vol. 17, no. 58, Fall 2019 (Farsi).
95. Ashkan Horri, Rahim Faez, "Tight-binding model for the electronic properties of buckled triangular borophene", Micro & Nano Letters, Volume 14, Issue 9, Aug. 2019, DOI: 10.1049/mnl.2019.0023.
94. Sadreddin Behjati Ardakani, Rahim Faez, "Spaser Based on Graphene Tube", Iranica sceintia, DOI: 10.24200/sci.2019.50322.1635.
93. Ashkan Horri, Rahim Faez, "Full-Quantum Simulation of Graphene Self-Switching Diodes", CHIN. PHYS. LETT. Vol. 36, No. 6 (2019) 067202.
92. Somayeh Gholami Rudi, Rahim Faez, Mohammad Kazem Moravvej-Farshi, Kamyar Saghafi, "Effect of Stone-Wales defect on an armchair graphene nanoribbon based photodetector", Superlattices and Microstructures 130 (2019) 127-138.
91. Sadreddin B. Ardakani and Rahim Faez, "Tunable spherical graphene surface plasmon amplification by stimulated emission of radiation", J. Nanophoton. 13(2), 026009 (2019), doi: 10.1117/1.JNP.13.026009.
90. Muhammad Reza Ghahri and Rahim Faez, "Circuit Modeling of the Modulator Based on a Plasmonic Waveguide", Journal of Nanoscience and Nanotechnology, Vol. 19, 1-7, 2019.
89. Farahnaz Zakerian, Morteza Fathipour, Rahim Faez, Ghafar Darvish, "The effect of structural defects on the electron transport of MoS2 nanoribbons based on density functional theory", Journal of Theoretical and Applied Physics, Feb. 2019.
88. Farahnaz Zakerian, Morteza Fathipour, Rahim Faez, Ghafar Darvish, "The effect of structural defects on the electron transport of MoS2 nanoribbons based on density functional theory", Journal of Theoretical and Applied Physics, Feb. 2019.
87. Sadreddin Behjati Ardakani and Rahim Faez, "Doped silicon quantum dots as sources of coherent surface plasmons", J. Opt. 20 (2018) 125001.
86. A. Bajelan, A. Yazdanpanah, R. Faez, G. Darvish, "Investigation performance of p-type junctionless field effect transistors with InGaP, InP, and Si channel materials", jieee 15(2) (2018) 1-7. (Farsi)
85. M. R. Ghahri, R. Faez, "Performance optimization of a plasmonic coupler based on a lossy transmission line", J. of Nanophotonics 12(2) (2018) 026009.
84. A. Mohamadian, M. Bagheri, R. Faez, "Investigation of the electronic structure of tetragonal B3N3 under pressure", Appl. Phys. A 124 (2018) 350-356.
83. M. Bagheri, R. Faez, "Pressure effect on the mechanical and electronic properties of B3N3: A first-principle study", Physica C: Superconductivity and its applications 548 (2018) 50-54.
82. A. Bahrami, R. Faez, "Simulation analysis of inverted organic solar cells with grating structure: Undesirable effects of high absorption near grating anode", Optik 154 (2018) 453-458.
81. F. Bajelan, A. Yazdanpanah Goharrizi, R. Faez, G. Darvish, "Performance improvement of junctionless field effect transistors using p-GaAs/AlGaAs heterostructure", Superlattices and Microstructures 110 (2017) 305-312.
80. Zahra Chaghazardi, Rahim Faez, Shoeib Babaee Touski, and Mahdi Pourfath, "Spin FET Based on Graphene Nanoribbon in the Presence of Surface Roughness", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 8, 3437, AUGUST 2017.
79. Ashkan Horri, Rahim Faez, Mahdi Pourfath, and Ghafar Darvish, "Modeling of a Vertical Tunneling Transistor Based on Graphene-MoS2 Heterostructure", IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 8, 3459, AUGUST 2017.
78. Hassan Shamloo, Rahim Faez, Atefeh Nazari, "Performance comparison of ideal and defected bilayer graphene nanoribbon FETs", Superlattices and Microstructures, 2017.
77. Masoud Iranmehr, Ali Mohamadian, Rahim Faez, "Effect of hotspot on THz radiation from Bi2Sr2CaCu2O8 intrinsic Josephson junctions", Appl. Phys. A 123(8) :502 (2017).
76. Ashkan Horri, Rahim Faez, and Ghafar Darvish, "Numerical simulation of vertical tunneling transistor with bilayer graphene as source and drain regions", Phys. Status Solidi A, 1700155, July (2017).
75. A. Horri, R. Faez, M. Pourfath, and G. Darvish, "A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure", Journal of Applied Physics 121, 214503 (2017).
74. Muhammad Reza Ghahri and Rahim Faez, "Minimum length modulator design with a graphene-based plasmonic waveguide", Applied Optics, Vol. 56, No. 17, p4926, June 2017.
73. Hassan Shamloo, Rahim Faez, Atefeh Nazari, "Performance Comparison of Ideal and Defected Bilayer Graphene Nanoribbon FETs", Superlattices and Microstructures, June 2017.
72. Danial Majidi, Rahim Faez, "Thermally induced spin-dependent current based on Zigzag Germanene Nanoribbons", Physica E Low-dimensional Systems and Nanostructures 86, 175-183, (2017).
71. A. Bahrami, R. Faez, "A novel organic-inorganic hybrid tandem solar cell with inverted structure", Appl. Phys. A,123:222, March (2017).
70. Homa Zare Beidaki, Rahim Faez, "Design and simulation of a triple junction solar cell based on quantum well", Journal of Iranian Association of Electrical and Electronics Engineers - Vol.13- No.4-Winter 2016 (Farsi).
69. E. Moreno, Z. Hemmat, J. B. Roldan, M. F. Pantoja, A. R. Bretones, S. G. Garcia, and R. Faez, "Implementation of Open Boundary Problems in Photo-Conductive Antennas by Using Convolutional Perfectly Matched Layers", IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, VOL. 64, NO. 11, NOVEMBER 2016.
68. Somayeh Gholami Rudi, Rahim Faez, Mohammad Kazem Moravvej-Farshi, "Effects of Stone-Wales defect on the electronic and transport properties of bilayer armchair graphene nanoribbons", Superlattices and Microstructures, october (2016).
67. Saeid Marjani, Seyed Ebrahim Hosseini, and Rahim Faez, "A silicon doped hafnium oxide ferroelectric p-n-p-n SOI tunneling field-effect transistor with steep subthreshold slope and high switching state current ratio", AIP ADVANCES 6, 095010 (2016)
66. Zahra Chaghazardi, Shoeib Babaee Touski, Mahdi Pourfath, and Rahim Faez, "Spin relaxation in graphene nanoribbons in the presence of substrate surface roughness", JOURNAL OF APPLIED PHYSICS 120, 053904, Aug 2016.
65. Saeid Marjani, Seyed Ebrahim Hosseini, Rahim Faez, "A 3D analytical modeling of tri-gate tunneling field-effect transistors", J Comput Electron, june 2016.
64. Atefeh Nazari, Rahim Faez, Hassan Shamloo, "Modeling comparison of graphene nanoribbon field effect transistors with single vacancy defect", Superlattices and Microstructures, 97, pp. 28-45, (2016).
63. Zahra Hemmata, Rahim Faez, Enrique Morenob, Farhood Rasoulic, Farzad Radfara,Mohsen Zaimbashi, "Transient and steady state study of a rear-illuminated 6H-SiC Photoconductive Semiconductor Switch". Optik 127 (2016) 4615-4620.
62. Shahryar Tamandani, Ghafar Darvish, Rahim Faez "Analytical Calculation of Energy levels of mono- and bilayer Graphene Quantum Dots Used as Light Absorber in Solar Cells", Appl. Phys. A, January 2016.
61. Atefeh Nazari, Rahim Faez, Hassan Shamloo, "Improving Ion / Ioff and subthreshold swing in graphene nanoribbon field effect transistors using single vacancy defects", Superlattices and Microstructures, Volume 86, Pages 483-492, October 2015.
60. S. Haji-Nasiri, M. K. Moravvej-Farshi, R. Faez, "A seamless-pitched graphene nanoribbon field effect transistor", Physica E 74, pp. 414-420, July (2015).
59. E. S. Kouhsari, R. Faez, M. Akbari Eshkalak, "A novel thermo-photovoltaic cell with quantum-well for high open circuit voltage", Superlattices and Microstructures 83, pp 61-70, (2015).
58. M. Akbari Eshkalak, R. Faez, S. Haji-Nasiri, "A novel graphene nanoribbon field effect transistor with two different gate insulators", Physica E66, pp.133-139, 2015.
57. S. Fotoohi, M. K. Moravvej-Farshi & R. Faez, "Electronic and transport properties of monolayer graphene defected by one and two carbon ad-dimers", Appl. Phys. A, pp. 2057-2063, April 2014.
56. Robab Madadi, Saeid Marjani, Rahim Faez, and Seyed Ebrahim Hosseini, "The Effect of Adding InGaN Interlayer on AlGaN/GaN Double Channel HEMT for Noise Improvement", Journal of Electrical Systems and Signals, Vol. 2, No. 1, February 2014.
55. S. Fotoohi, M. K. Moravvej-Farshi, R. Faez, "Role of 3D-paired pentagon-heptagon defects in electronic and transport properties of zigzag graphene nanoribbons", Applied Physics A, vol. 116, pp. 295-301, Jan. 2014.
54. L. Akbari, R. Faez, "Crosstalk Stability Analysis in Multilayer Graphene Nanoribbon Interconnects", Circuits, Systems, and Signal Processing, Volume 32, Issue 6, pp 2653-2666, December 2013.
53. A. Horri, R. Faez, "Simulation of deep level traps effects in quantum well transistor laser", Journal of Computational Electronics, Volume 12, Issue 4, pp 812-815, December 2013.
52. A. Horri, S. Mirmoeini and R. Faez, "Analysis of Deep Level Trap Effects in Transistor Lasers", Lasers in Eng., Vol. 25, pp. 313-322, 2013.
51. M. Fallaha, R. Faez and A.H. Jafaric, "Simulation of a carbon nanotube field effect transistor with two different gate insulators", Scientia Iranica F, 20(6), pp. 2332-2340, (2013).
50. M. Rostami, R. Faez, and H. Rabiee Golgir, "Magnetization of bilayer graphene with interplay between monovacancy in each layer", J. Appl. Phys., vol. 114, pp. 084313, Aug. (2013).
49. H. Karamitaheri, N. Neophytou, M. karami taheri, R. Faez, and H. Kosina, "Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons", IEEE Transactions on Electron Devices, Vol. 60, NO. 7, pp. 2142- 2147, July 2013.
48. H. Karamitaheri, N. Neophytou, M. karami taheri, R. Faez, and H. Kosina, "Calculation of Confined Phonon Spectrum in Narrow Silicon Nanowires Using the Valence Force Field Method", Journal of Electronic Materials, Vol. 42, No. 4, pp. , Mar 2013.
47. A. Horri, R. Faez, "Large signal analysis of double quantum well transistor laser", Opt Quant Electron, Vol. 45, no. 1, pp.9641-5, Jan. 2013.
46. R. Madadi, R. Faez, and B. Behtoee, "Influence of Physical Parameters on Microwave Noise Characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs", International Journal of Applied Physics and Mathematics, Vol. 2, No. 6, November 2012.
45. B. Behtoee and R. Faez, "Improving Elmore model of RLC networks for Applying to SWCNT interconnects", Applied Mechanics and Materials, Vols. 110-116, pp. 5078-84, 2012.
44. A. Shahhoseini, S. Ghorbanalipour, R. Faez; "Detemining the Thickness of Barriers and Well of Resonance Tunneling Diodes by Specified I-V Characteristic", Applied Mechanics and Materials, Vols. 110-116, pp. 5464-70, 2012.
43. S. Asgari and R. Faez; "Reduced Master Equation for Modeling of Ferromagnetic Single-Electron Transistor", Applied Mechanics and Materials, Vols. 110-116, pp. 3103-10, 2012.
42. A. Horri, R. Faez, "Optical ASK and FSK Modulation By Using Quantum Well Transistor Lasers", International Journal of Optics and Photonics (IJOP), Vol. 6, No. 2, pp 105-111, -Summer-Fall 2012.
41. M. Farrokhi, R. Faez, S. Haji Nasiri, and B. Davoodi, "Effect of Varying Dielectric Constant on Relative Stability for Graphene Nanoribbon Interconnects", Applied Mechanics and Materials Vols. 229-231, pp. 205-209, Nov 2012.
40. M. Farrokhi . R. Faez, S. Haji Nasiri and B. Davoodi, "Effect of Varying Aspect Ratio on Relative Stability for Graphene Nanoribbon Interconnects", Applied Mechanics and Materials Vols. 229-231, pp. 205-209, Nov 2012.
39. A. Horri, S. Z. Mirmoeini, R. Faez, "Large Signal Circuit Model of Two-Section Gain Lever Quantum Dot Laser", Chin. Phys. Lett., Vol. 29, No. 11, 114207(3 pages), (2012).
38. R. Hosseini, M. Fathipour, R. Faez, "A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor", International Journal of Electronics, Volume 99, Issue 9, pages 1299-1307 Sep. 2012.
37. R. Hosseini, M. Fathipour, R. Faez, "Quantum simulation study of gate-all-around (GAA) silicon nanowire transistor and double gate metal oxide semiconductor field effect transistor (DG MOSFET)", International Journal of Physical Sciences, Vol. 7(28), pp. 5054-5061, July 2012.
36. S. Haji Nasiri, R. Faez, M. K. Moravvej-Farshi, "Stability analysis in multiwall carbon nanotube bundle interconnects", Microelectronics Reliability. 2012.
35. R. Hosseini, M. Fathipour, R. Faez, "performance evaluation of source heterojunction strained channel gate all around nanowire transistor", Modern Physics Letters B, Vol. 26, No. 12, 1250076 (13 pages), (2012).
34. S. Marjani, R. Faez, H. Marjani, "Analysis of the Various Elements of Heat Sources in Silicon Carbide Polymers (6H-SiC and 3C-SiC) Semiconductor Laser", Asian Journal of Chemistry; Vol. 24, No. 5, pp. 2333-2335, (2012).
33. S. Marjani, R. Faez, H. Marjani, "Design and Modeling of a Semiconductor Laser by Employing Silicon Carbide Polymers (6H-SiC, 3C-SiC and 4H-SiC)", Asian Journal of Chemistry; Vol. 24, No. 5, pp. 2177-2179, (2012).
32. H. Karamitaheri, N. Neophytou, M. Pourfath, R. Faez, and H. Kosina, "Engineering enhanced thermoelectric properties in zigzag grapheme Nanoribbons", J. Appl. Phys., vol.111, no.5, pp. 054501(1-9), (Mar 2012).
31. A. Horri, S. Z. Mirmoeini, R. Faez, "The noise equivalent circuit model of quantum-dot lasers", Journal of Russian Laser Research, Volume 33, Number 3, pp. 217-226, May, 2012.
30. A. Horri, S. Z. Mirmoeini, R. Faez, "Analysis of carrier dynamic effects in transistor lasers", Optical Engineering, vol. 51, no. 2, pp. 024202(1-6), (February 2012).
29. S. Haji Nasiri, R. Faez, M. K. Moravvej-Farshi, "Time Domain Analysis of Graphene Nanoribbon Interconnects Based on Transmission Line Model", Iranian Journal of Electrical & Electronic Engineering, Vol. 8, No. 1, pp. 37-44, 2012.
28. S. Haji Nasiri, R. Faez, M. K. Moravvej-Farshi, "Compact formulae for number of conduction channels in various types of grapheme nanoribbons at various temperatures", Modern Physics Letters B, Vol. 26, No. 1 (2012) 1150004 (5 pages).
27. S. H. Nasiri, R. Faez, B. Davoodi, and M. Farrokhi "Bode Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3D-VLSI Circuits", World Academy of Science, Engineering and Technology 77, pp. 568-571, 2011.
26. A. Horri, S. Z. Mirmoeini, R. Faez, "relative intensity noise study in two mode quantum dot laser", Optica applicata, Vol. 41, No.4, pp. 961-970, 2011.
25. S. A. Sedigh-Zyiabari, K. Saghafi, R. Faez, M. K. Moravvej-Farshi, "Numerical Investigation on the Temperature dependence of the cylindrical-gate-all-around Si-NW-FET", Modern Physics Letters B, Vol. 25, No. 29 (2011) 2269-2278.
24. H. Karamitaheri, M. Pourfath, M. Pazoki, R. Faez, and H. Kosina, "Graphene-Based Antidots for Thermoelectric Applications", Journal of The Electrochemical Society, vol. 158, no. 12, pp. K213-K216 (2011).
23. H. Rabiee Golgir, R. Faez, M. Pazoki, H. Karamitaheri, and R. Sarvari, "Investigation of quantum conductance in semiconductor single-wall carbon nanotubes: Effect of strain and impurity", Journal of Applied Physics, vol.110, no.6, 064320 (Sep. 2011).
22. H. Karamitaheri, M. Pourfath, R. Faez, and H. Kosina, "Geometrical effects on the thermoelectric properties of ballistic graphene antidot lattices", Journal of Applied Physics 110, no.5, 054506 (Sep. 2011).
21. A. Shahhoseni, K. Saghafi, M. K. Moravvej-Farshi, R. Faez, "Triple-Tunnel Junction Single Electron Transistor (TTJ-SET)", Modern Physics Letters B, Vol. 25, No. 17 (July 2011) 1487-1501.
20. R. Faez, A. Marjani and S. Marjani, "Design and simulation of a high power single mode 1550 nm InGaAsP VCSELs", IEICE Electronics Express, Vol.8, No. 13, pp.1096-1101 (July 2011).
19. A. Horri, R.Faez, "Small signal circuit modeling for semiconductor self-assembled quantum dot laser", Optical Engineering vol.50, no. 3, pp. 0342021-5 (March 2011).
18. A. Horri, R.Faez, H. R. Hoseini, "A small signal circuit model of two mode InAs/GaAs quantum dot laser", IEICE Electronics Express, Vol.8, No. 4 pp.245-251 (February 2011).
17. Saeed Haji Nasiri, Mohammad Kazem Moravvej-Farshi, and Rahim Faez, "Stability Analysis in Graphene Nanoribbon Interconnects", IEEE Elec. Dev. Lett. 31, 12, 1458 (Dec. 2010).
16. Karimian M., Dousti M., Pouyan M., Faez R. "A New SPICE Macro-model for the Simulation of Single Electron Circuits", Journal of the Korean Physical Society, Vol. 56, No. 4, pp. 1202-1207, April 2010.
15. Sahar Ohadi, Rahim Faez, and Hamid Reza Hoseini, "Investigation of breakdown voltage in InAlAs/InGaAs/InP HEMTs with different structures", IEICE Electronics Express, Vol.7, No. 19 pp.1447-1452 (2010).
14. A. Shahhoseini, K. Saghafi, M. K. Moravvej-Farshi and R. Faez, "An Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors", Iranian Journal of Electrical & Electronic Engineering, Vol.5, no.4, pp.234-243, 2009.
13. R. Faez and S. E. Hosseini, "Novel Structures for Carbon Nanotube Field Effect Transistors", International Journal of Modern Physics B, Vol. 23, no. 19, pp. 3871-3880, 2009.
12. S. E. Hosseini, R. Faez, "Quantum Corrections in the Drift-Diffusion Model", Jpn. J. Appl. Phys. The Institute of Pure and Applied Physics, Vol. 46, no. 11, pp.7247-7250, 2007.
11. R. Faez, S. E. Hosseini, "introduction and Investigation of new structures for FET made by CNT", Iranian journal of electrical and computer engineering (Farsi edition), vol.5, no.3, pp. 173-177, fall 2007.
10. M. Pourfath and R. Faez, "Using Quantum Monte Carlo Method for a Resonant Tunneling Diod", Sharif Journal of Science & Technology, Vol. 23, No. 38, pp 109-113, 2007.
9. R. Faez, "Simulation of 2D Gas in AlGaN/GaN HEMT and Investigation of its Breakdown Voltage", Sharif Journal of Science & Technology, Vol. 23, No. 38, pp 3-9, 2007.
8. R. Faez and S. E. Hosseini, "Carbon Nanotube Field Effect Transistors with improved Characteristics", WSEAS Transactions on Circuits and Systems, Issue 5, Volume 5, May 2006.
7. S. E. Hosseini and R. Faez, "Efficient Implementation of the Convective Terms in the Hydrodynamic Equations", Comput. Methods Appl. Mech. Engrg. 194, p.969, 2005.
6. S. E. Hosseini, R. Faez, "Novel Quantum Hydrodynamic Equations for Semiconductor Devices", Jpn. J. Appl. Phys. 41, p.1300, 2002.
5. S. E. Hosseini, R. Faez, "Effective Classical Potential for Quantum Semiconductor Devices", Scientia Iranica, Vol. 7, No. 3&4, p.232, 2000.
4. R. Faez, M. Tabandeh, "Design of a Very Fast Logic Gate Using MBT", Scientia Iranica, Vol. 7, No. 3&4, p.212, 2000.
3. R. Faez, M. Farahmand, "Comparing n+n n+ Diodes Made by Si and GaAs Using Monte Carlo Method", Scientia Iranica, Vol. 5, No. 1&2, p.29, 1998.
2. R. Faez, M. Tabandeh, "Switching Performance of Metal Base Transistor", Scientia Iranica, Vol. 4, No. 4, p.172, 1998.
1. R. Faez (Abdeshaah), K. L. Wang, "Transport Study of Metal Base Transistor Using a Monte Carlo Technique", IEEE, ED31, 1984.
Conference Papers:
87. Yazdan Karimi Pashaki, Rahim Faez, "Low Power Consumption All-optical AND Logic Gate Based on Photonic Crystal Waveguide", 2nd international conference on new approaches in science, engineering & technology, Istanbul, Turkey, 5-6 Nov. 2015.
86. S. Fotoohi, Mohammad Kazem Moravvej-Farshi and Rahim Faez, "The impact of physical and electronic properties of graphene linear defect", NCWNN1394, Kharazmi university, 20-21 May 2015.
85. R. Faez, M. Hakimi Heris, "Digital to time converter using SET in HSPICE", 23rd Iranian Conference on Electrical Engineering (ICEE), Sharif University of Technology, May 10-11 2015.
84. Z. Hemmat, R. Faez, S. Amiri, "Simulation and Investigation of a Back-Triggered 6H-SiC High Power Photoconductive Switch", 6th Power Electronics, Drive Systems & Technologies Conference (PEDSTC'2015), International, Shahid Beheshti University, Tehran, Iran, Feb. 3-4 2015.
83. Z. Hemmata, R. Faeza, "Simulation and Investigation of a rear-illuminated Gallium Arsenide High Power Photoconductive Semiconductor Switch", 5th International Congress on Nanoscience & Nanotechnology (ICNN2014) Tehran, Iran, 22-24 October 2014.
82. P. Ataei, R. Faez, S. Haji-Nasiri, "Atomic simulation of grapheme Nanoribbons with substitutional Fe impurities", National conference on nano technology: theory to application, Isfahan, Feb. 20, 2014.
81. N. Hajian, R. Faez, and H.R. Hoseini, "Design and Simulation of a Wavelength Converter Using Semiconductor Optical Amplifier", The20th Iranian Conference on Optics and Photonics and the sixth Iranian Conference on Photonics Engineering and technology, Shiraz University of Technology, Jan. 28-30, 2014.
80. Mohsen Samadi, Rahim Faez, "Effect of Stone-Wales Defects on Electronic Properties of Armchair Graphene Nanoribbons", 21th Iranian conference on electrical engineering, Ferdousi university, Mashhad, Iran, Apr. 2013.
79. Sonia Sadeghi, M. Vadizadeh, R. Faez, "Compare Noise Characteristic of DC-HEMT and HEMT", 21th Iranian conference on electrical engineering, Ferdousi university, Mashhad, Iran, Apr. 2013.
78. S. Marjani, S. E. Hosseini, R. Faez, "Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction", 21th Iranian conference on electrical engineering, Ferdousi university, Mashhad, Iran, Apr. 2013.
77 R.Faez, S.Barami, "Spin Effect on Band Structure of Zigzag and armchair Graphene Nanoribbon with Stone-Wales defect", 21th Iranian conference on electrical engineering, Ferdousi university, Mashhad, Iran, Apr. 2013.
76. R. Madadi, S. Marjani, R. Faez, "Silicon Carbide Polymer (6H-SiC, 3C-SiC and 4H-SiC) Semiconductor Laser: Influence of Self Heating", 3rd Iranian Conference on Optics & Laser Engineering (ICOLE), Malek Ashtar University of Technology, Isfahan, Iran, 9-10 Oct. 2013.
75. S.Barami, R.Faez, "Spin-Dependent Band Structure of Zigzag Graphene Nanoribbon with a Vacancy", 5th Iranian conference on electrical and electronic engineering (ICEEE2013), Islamic azad university gonabad branch, Gonabad, Iran, 20-22 Aug. 2013.
74. Z. Rajabi, A. Shahhoseini, and R. Faez, "The Non-Equilibrium Green's Function (NEGF) Simulation of Nanoscale Lightly Doped Drain and Source Double Gate MOSFETs", International Conference On Devices Circuits and Systems, (ICDCS'12), Karunya Institute of Technology & Sciences, Coimbatore, India, March 15 - 16, 2012.
73. R.Faez, M. Serailo, "Investigation and simulation of GaSb/AlSb HEMT and comparing it with two channel case regarding speed and performance using quantum effects", Iran's first national Nano electronics conference, Kermanshah, Iran, 7-9 Sep 2012.
72. S. Haji Nasiri, M. K. Moravvej-Farshi, R. Faez, A. Bajelan, "Electronic Features of Rippled Graphene", 20th Iranian Conference on Electrical Engineering ICEE 2012, Tehran, Iran, 15-17 May 2012.
71. S. Haji Nasiri, R. Faez, B. Davoodi, M. Farrokhi, "Bode Stability Analysis for Graphene Nanoribbon Interconnects Used in 3D-VLSI Circuits", 20th Iranian Conference on Electrical Engineering ICEE 2012, Tehran, Iran, 15-17 May 2012.
70. B. Davoodi, R. Faez, S. Haji Nasiri, M. Farrokhi, "Nichols Stability Analysis for Single Wall Carbon Nanotube Interconnects Used in 3D-VLSI Circuits", 20th Iranian Conference on Electrical Engineering ICEE 2012, Tehran, Iran, 15-17 May 2012.
69. Z. Rajabi, A. Shahhoseini, and R. Faez, "The Non-Equilibrium Green's Function (NEGF) Simulation of Nanoscale Lightly Doped Drain and Source Double Gate MOSFETs", international conference on devices, circuits and systems (ICDCS-2012), karuny university, Coimbatore, India, 15-16 march 2012.
68. M. Fallah, R. Faez, A. Sadr, "The Effect of Strain on Carbon Nanotube Filed Effect Transistors (FETs)", the 4th International Conference on Nanostructures (ICNS4), Kish Island, I.R. Iran. 12-14 March, 2012, Poster.
67. M. Fallah, R. Faez, "A Carbon Nanotube Filed Effect Transistor (FET) with Two Different Insulators in Gate", the 4th International Conference on Nanostructures (ICNS4), Kish Island, I.R. Iran. 12-14 March, 2012, Poster.
66. B. Davoodia, R. Faezb, S. Haji Nasiria, M. Farrokhia, "Effect of Varying Dielectric Constant on Relative Stability for Carbon Nanotube based Interconnects", the 4th International Conference on Nanostructures (ICNS4), Kish Island, I.R. Iran. 12-14 March, 2012, Poster.
65. M. Fallah, R. Faez, and A. Sadr, "Simulation of Carbon Nanotube with Phonon Scattering", 2011 International Conference on Signal, Image Processing and Applications, ICSIA2011, Chennai, India, December 17-18, 2011.
64. H. Karamitaheri, M. Pourfath, R. Faez, and H. Kosina, "Transport Gap Engineering in Zigzag Graphene Nanoribbons", trends in nanotechnology TNT2011, Canary Islands, Spain, Nov. 21-25, 2011.
63. S. Asgari, R. Faez, "A Novel Fast Method for Modeling of Non-Collinear Ferromagnetic Single-Electron Transistors", E-Nanotechnology at IEEE-RSM2011, Le Meridien, Kota Kinabalu, Malaysia, September 28-30, 2011.
62. R. Hosseini, M. Fathipour, R. Faez, "Channel Length Scaling and the Impact of Exchange-Correlation Effects on the Performance of GAA SNW Transistor", Nano Korea, August 24-26, 2011.
61. S.Asgari, R.Faez, "Reduced master equation for modeling of spin transport in F/F/N set", 4th IEEE International Nanoelectronic Conference INEC, Tao Yuan Taiwan, June 21-24, 2011, Poster.
60. N. Davari, R. Faez, "Temperature effect on the operation of multi collar bilayer quantum dot IR photodetector", APMAS 2011, , Antalya, Turkey, 12-15 May 2011.
59. R. Manzari, R. Madadi, R. Faez, "Introducing the AlGaN/InAGaN/GaN DH-HEMT Structure and Analysing its Breakdon Voltage", APMAS 2011, Antalya, Turkey, 12-15 May, 2011.
58. R. Madadi, R. Faez, R. Manzari, "Influence of Physical Parameters on Broad Band Microwave noise Characteristics of Composite Channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs", APMAS 2011, Antalya, Turkey, 12-15 May, 2011.
57. R. Madadi, R. Faez, "Influence of Aluminum Concentration of Barrier on Noise Characteristics of Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs", 5th SASTech 2011, Khavaran Higher-education Institute , Mashhad, Iran, Pp1-8, May 12-14, 2011.
56. K. Shervin, R. Faez, "An equivalent circuit for quantum point contact together with quantum dot", 5th SASTech 2011, Khavaran Higher-education Institute, Mashhad, Iran. May 12-14, 2011.
55. H. Karami taheri, M. Pourfath, R. Faez, H. Kosina, "An Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices", The Electrochemical Society (219th ECS Meeting) Montreal, Canada, May 1 - 6, 2011.
54. H. Karami taheri, M. Pourfath, R. Faez, H. Kosina, "Hydrogen-Passivated Graphene Antidot Structures for Thermoelectric Applications", 12th. Int. Conf. on Thermal, Mechanical and Multiphysics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE Linz, Austria p1-4, April 17-20, 2011.
53. S.Asgari, R.Faez, "Reduced master equation as novel and fast method for modeling of spin transport in F/F/N set", 5th International Conference on Humanoid, Nanotechnology, Information Technology, Communication and Control, Environment, and Management HNICEM 2011, Traders Hotel, Manila, Philippines, 10-13 March, 2011.
52. H. Rabiei, H. Karami, R. Faez, R. Sarvari, M. Pazouki, "Quantum conductance study of semiconductor carbon nanotube under stress", 10th conference on condensed matter, Shiraz university, Jan. 2011.
51. H. Rabiei, H. Karami, R. Faez, R. Sarvari, M. Pazouki, "Study of effect of impurity on quantum conductance of semiconductor carbon nanotube", 10th conference on condensed matter, Shiraz university, Jan. 2011.
50. Ali Shahhoseini, Samane Ghorbanalipour, Rahim Faez, "Detemining the Thickness of Barriers and Well of Resonance Tunneling Diodes by Specified I-V Characteristic", 2010 International Conference on Physics Science and Technology (ICPST 2010).
49. Behrouz Behtoee, Rahim Faez, "Improving Elmore model of RLC networks for Applying to SWCNT interconnects", 2010 International Conference on Physics Science and Technology (ICPST 2010).
48. S. Asgari, R. Faez, "A new and fast simulation method of spin dependent elctron transport ferromagnetic single electron transistor", 13th Iranian Student conference on Electrical Engineering (ISCEE2010), Tarbiat moddaras university, Sep. 2010.
47. K. Shervin, R. Faez, "Simulation of quantum dot charge behavior detected by quantum contact", 18th Iranian Conference on Electrical Engineering (ICEE2010), Isfahan University of technology, May 2010.
46. N. Davari, R. Faez, "Two band middle infrared detector using quantum dot", 18th Iranian Conference on Electrical Engineering (ICEE2010), Isfahan University of technology, May 2010.
45. R. Faez, M. Serailou, "study and simulation of GaSb/AlSb HFET and comparing it with double channel case regarding velociiiy and efficiency applying quantum effect", 18th Iranian Conference on Electrical Engineering (ICEE2010), Isfahan University of technology, May 2010.
44. Karimian M., Dousti M., Pouyan M., Faez R., "A New SPICE Macro-Model for Simulation of Single Electron Circuits", International Conference on Microelectronics, Marrakech, Morocco, Dec. 19-22 2009.
43. Karimian M., Dousti M., Pouyan M., Faez R., "An Improved Macro-Model for Simulation of Single Electron Transistor (SET) Using HSPICE", TIC-STH, Ryerson University, Toronto, Ontario, Canada, September 26-27, 2009.
42. Karimian M. R., Pouyan M., Faez R., Dousti M., "A New Macro-Model for Simulation of Single Electron Transistor (SET) by Using HSPICE", IEEE-RSM Proc., Kota Bahru, Malaysia, 2009.
41. K. Shervin, R. Faez, "Simulation of double island single electron transistor using Simon simulator", 12th Iranian Student conference on Electrical Engineering (ISCEE2009), Tabriz, Aug. 2009.
40. R. Faez, M. Serailou, M. Y. Serailou, "Study of schottky barrier height variation on the characteristics of InAs//AlSb HEMT transistor", 12th Iranian Student conference on Electrical Engineering (ISCEE2009), Tabriz, Aug. 2009.
39. R. Faez, M. Serailou, M. Y. Serailou, "Simulation of InAs/AlSb HEMT transistors", 12th Iranian Student conference on Electrical Engineering (ISCEE2009), Tabriz, Aug. 2009.
38. R. Faez, P. Faraji, "Study of noise in MESFET made by GaAs", 12th Iranian Student conference on Electrical Engineering (ISCEE2009), Tabriz, Aug. 2009.
37. A. KazemPour, R. Faez, A. ShahHouseini, "Study of Schottky barrier in the lateral connection between the nanotube - Palladium using density function theory method", 12th Iranian Student conference on Electrical Engineering (ISCEE2009), Tabriz, Aug. 2009.
36. A. KazemPour, R. Faez, A. ShahHouseini, A. Ghodretnama, "Investigation of Schottky barrier in metal-nanotube contact using line-up technique", 12th Iranian Student conference on Electrical Engineering (ISCEE2009), Tabriz, Aug. 2009.
35. H. Tavasoli, R. Faez, "Current control mechanism in single electron devices", 12th Iranian Student conference on Electrical Engineering (ISCEE2009), Tabriz, Aug. 2009.
34. H. Tavasoli, R. Faez, "Investigation of single electron devices simulation methods", 12th Iranian Student conference on Electrical Engineering (ISCEE2009), Tabriz, Aug. 2009.
33. R. Faez, M. Serailo, R. KhodaGholi, A. Bajelan, E. AtaeiPour, "Investigation of effect of gate length variation on RF and DC characteristic of InAs/AlSb HFET transistor", 17th Iranian Conference on Electrical Engineering (ICEE2009), Iran University of Science and Technology, May 2009.
32. H. Niazi, M. Saremi, R. Faez, "Investigation of effect of InGaN layer in DH-HFET transistor based on AlGaN-GaN", 17th Iranian Conference on Electrical Engineering (ICEE2009), Iran University of Science and Technology, May 2009.
31. A. KhanMohammadi, R. Faez, "design and manufacture of I2L cells and measurement of their parameters", 17th Iranian Conference on Electrical Engineering (ICEE2009), Iran University of Science and Technology, May 2009.
30. M. J. Taghk, R. Faez, "Study of effect of gate to channel length ratio on cutoff frequency of CNTFET", 16th Iranian Conference on Electrical Engineering (ICEE2008), Tarbiat Modarres University, May 2008.
29. A. Shahhoseini, K. Saghafi, M. K. Moravvej-Farshi, and R. Faez, "Effect of inequality of source and drain capacitance and resistance on the performance of asymmetric single electron transistor", 16th Iranian Conference on Electrical Engineering (ICEE2008), Tarbiat Modarres University, May 2008.
28. M. S. Pishvaei, R. Fez, E. AtaeiPour, A. Bagelan, "Investigation of cap layer effect on source resistance of HEMT transistor made by AlGaN-GaN", 16th Iranian Conference on Electrical Engineering (ICEE2008), Tarbiat Modarres University, May 2008.
27. M.J. Tajik, R. Faez, A. Kashefian, B. Rashidian, "Accurate Calculation of fT by Considering Quantum and Parasitic Capacitances", IEEE International Nanoelectronics Conference 2008, INEC 2008, Shanghai, China, 24-27 March 2008, pp.392-395.
26. A. Shahhoseini, K. Saghafi, M. K. Moravvej-Farshi, and R. Faez, "Effect of Asymemtery on the Threshold Voltage of Single Electron Transistor", IEEE International Nanoelectronics Conference 2008, INEC 2008, Shanghai, China, 24-27 March 2008, pp.1244-1247.
25. A. Shahhoseini, K. Saghafi, M. K. Moravvej-Farshi, and R. Faez, "A New Model for Asymmetric Single Electron Tunneling Transistors - An Analytical Approach", The 2nd Conference on Nanostructures (NS2008), March 11-14, 2008, Kish University, Kish Island, I.R. Iran.
24. R. Faez, E. Ataeipour, and A. Bajelan, "Quantum effects in two-channel HFET Transistors based on the InGaP/InGaAs", National Conference on Electrical Engineering, NEEC2008, Islamic Azad University of Najaf Abad, 15 and 16 March 1386.
23. R. Faez, H. Niazi, M. Saremi, "simulation of InP HEMT transistor with composite barrier layer and comparing with simple barrier layer", National Conference on Electrical Engineering, NEEC2008, Islamic Azad University of Najaf Abad, 15 and 16 March 1386.
22. S. E. Hosseini and R. Faez, "Quantum Energy Balance Simulation of pHEMT Devices", ICETAETS-2008, 13-14 January 2008.
21. Ali A. Orouji, Nima Dehdashti Akhavan, and R. Faez, "Two-Dimensional Quantum Simulation of Scaling Effects in Ultrathin Body MOSFET Structures: NEGF Approach", International Workshop on the Physics of Semiconductor Devices IWPSD-2007, Bombay, India, 17-20 December 2007.
20. Nima Dehdashti Akhavan, Ali A. Orouji, and R. Faez, "Charge Controlling in Nanoscale Shielded Channel DG-MOSFET: A Quantum Simulation", International Workshop on The Physics of Semiconductor Devices, IWPSD-2007, Bombay, India, 17-20 December 2007.
19. Nima A. Dehdashti, Ali A. Orouji, R. Faez, "Full Quantum Mechanical Simulation of a novel nanoscale DG-MOSFET: 2D NEGF Approach", IEEE AFRICON 2007 Namibia, 26-28 September 2007 pp. 4521-4.
18. S.Azimi, A. Sammak, B. Khadem Hosseinieh, S. Mohajerzadeh, R. Faez and N. Izadi, "Smart Etch or Plasma Hydrogenation- Assisted High Aspect Ratio Etching of Silicon", Fifteenth Iranian Conference on Electrical Engineering, May 2007.
17. R. Faez, A. Bajelan and E. Ataeipour, "Simulation of Double Channel HEMT Based on GaN with Quantum Effect and its Comparison with a Single Channel HEMT Device", Fifteenth Iranian Conference on Electrical Engineering, May 2007.
16. S. E. Hosseini, R. Faez, H. Sadoughi Yazdi, "Quantum Drift-Diffusion Equation for Simulation of Semiconductor Devices", Fifteenth Iranian Conference on Electrical Engineering, May 2007.
15. S. E. Hosseini, R. Faez, H. Sadoughi Yazdi, "Introducing Quantum Correction in Classical Drift-Diffusion Equations", The Eighths Conference on Condensed matter, Feb. pp. 213-216, 2006.
14. R. Faez and S. E. Hosseini, "Carbon Nanotube Field Effect Transistors with improved Characteristics", 5th WSEAS Int. Conf. on Instrumentation, Measurement, Circuits and Systems, Hangzhou, China, April 16-18, 2006 (pp162-165).
13 S. E. Hosseini, R. Faez, "Real Space Transfer Simulation of Electrons in pHEMT devices", 5th WSEAS Int. Conf. on Instrumentation, Measurement, Circuits and Systems, Hangzhou, China, April 16-18, 2006 (pp291-293).
12. A. Khanmohammadi and R. Faez, "Design and Fabrication of Integrated Injection Logic", Fourteenth Iranian Conference on Electrical Engineering, May 2006.
11. R. Faez and S. E. Hosseini, "Introduction and Investigation of New Structures for FETs Made With Carbon Nanotube", Fourteenth Iranian Conference on Electrical Engineering, May 2006, in Farsi.
10. S. E. Hosseini and R. Faez, "Simulation of pHEMT Using Quantum Energy Balance Equations", Twelvth Iranian Conference on Electrical Engineering, May 2004, in Farsi.
9. R. Faez and M. Pourfath, "Application of Corrected Quantum Potential in Monte Carlo for an RTD", Eleventh Iranian Conference on Electrical Engineering, May 2003, in Farsi.
8. S. E. Hosseini, R. Faez, "An Effective Numerical Methode for Complete Balance Equations", Tenth Iranian Conference on Electrical Engineering, May 2002, in Farsi.
7. S Tong, JL Liu, J Wan, R Faez, V Pouyet, KL Wang, "Normal incidence near 1.55 μm Ge quantum dot photo detectors on Si substrate", Asia Pacific Optical and Wireless Communications Conference and Exhibit, 2001.
6. M. Rahnavard, K. Hamzeh, R. Faez, F. Imani, "Design and Fabrication of Infrared Photoconductive Detectors Made by InSb in the Range of 3-5 Microns", First Scientific and Practical Conference in Institute of Aerospace Industry, Oct. 2000, in Farsi.
5. S. E. Hosseini, R. Faez, "Quantum Hydrodynamic Equations with Quantum Corrected Potential", Twelfth International Conference in Microelectronics, Oct. 2000.
4. S. E. Hosseini, R. Faez, "Quantum Correction in Balance Equations", Anual Conference of Physics and Fifth Student Conference in Physics, Aug. 2000, in Farsi.
3. S. E. Hosseini, R. Faez, "Simulation of n+n n+ Diode Using Quantum Hydrodynamic Equations", Iranian Conference on Electrical Engineering, May 1999, in Farsi.
2. R. Faez, "A new Method for Correction of Hydrodynamic Equations", Iranian Conference on Electrical Engineering, May 1999, in Farsi.
1. R. Faez, M. Farahmand, "Comparing n+n n+ Si and GaAs Diodes Using Monte Carlo Method", Iranian Conference on Electrical Engineering, May 1997, in Farsi.
